← Back to search

Doping Dependence of an n-Type Cuprate Superconductor Investigated by Angle-Resolved Photoemission Spectroscopy

N. P. Armitage, F. Ronning, D. H. Lu, C. Kim, A. Damascelli, K. M. Shen, D. L. Feng, H. Eisaki, Z.-X. Shen, P. K. Mang, N. Kaneko, M. Greven, Y. Onose, Y. Taguchi, Y. Tokura

DOI 10.1103/PhysRevLett.88.257001 · Physical Review Letters

T1

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

We present an angle-resolved photoemission doping dependence study of the n-type cuprate superconductor Nd2−xCexCuO4±δ, from the half-filled Mott insulator to the Tc=24K superconductor. In Nd2CuO4, we reveal the charge-transfer band for the first time. As electrons are doped into the system, this feature’s intensity decreases with the concomitant formation of near- EF spectral weight. At low doping, the Fermi surface is an electron-pocket (with volume ∼x) centered at (π,0). Further doping leads to the creation of a new holelike Fermi surface (volume ∼1+x) centered at (π,π). These findings shed light on the Mott gap, its doping evolution, as well as the anomalous transport properties of the n-type cuprates.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Nd2-xCexCuO4±δ

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

24Pressure not reportedunknown

Similar papers