Nodal Order Parameter in Electron-Doped Pr2−xCexCuO4−δ Superconducting Films
A. Snezhko, R. Prozorov, D. D. Lawrie, R. W. Giannetta, J. Gauthier, J. Renaud, P. Fournier
DOI 10.1103/PhysRevLett.92.157005 · Physical Review Letters
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Abstract
The London penetration depth, λab(T), is reported for thin films of the electron-doped superconductor Pr2−xCexCuO4−δ with varying Ce concentration, x=0.13, 0.15, and 0.17. Measurements down to 0.35 K were carried out using a tunnel-diode oscillator with excitation fields applied both perpendicular and parallel to the conducting planes. Films at all three doping levels exhibited power law behavior indicative of d-wave pairing with impurity scattering. These results are fully consistent with previous measurements on single crystals.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Pr2-xCexCuO4-δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 9.1 | Pressure not reported | unknown |
| Pr2-xCexCuO4-δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 20.5 | Pressure not reported | unknown |
| Pr2-xCexCuO4-δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 11.8 | Pressure not reported | unknown |
| V3Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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