Dependence of the Superconducting Transition Temperature on the Doping Level in Single-Crystalline Diamond Films

E. Bustarret; J. Kačmarčik; C. Marcenat; E. Gheeraert; C. Cytermann; J. Marcus; T. Klein

doi:10.1103/PhysRevLett.93.237005

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Dependence of the Superconducting Transition Temperature on the Doping Level in Single-Crystalline Diamond Films

E. Bustarret, J. Kačmarčik, C. Marcenat, E. Gheeraert, C. Cytermann, J. Marcus, T. Klein

DOI 10.1103/PhysRevLett.93.237005 · Physical Review Letters

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Abstract

Homoepitaxial diamond layers doped with boron in the 1020–1021 cm−3 range are shown to be type II superconductors with sharp transitions (∼0.2 K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those 001-oriented single-crystalline films is about 5–7 1020 cm−3. The H−T phase diagram has been obtained from transport and ac-susceptibility measurements down to 300 mK.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	40	Pressure not reported	unknown