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Doping Controlled Superconductor-Insulator Transition in Bi2Sr2−xLaxCaCu2O8+δ

Seongshik Oh, Trevis A. Crane, D. J. Van Harlingen, J. N. Eckstein

DOI 10.1103/PhysRevLett.96.107003 · Physical Review Letters

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Abstract

We show that the doping-controlled superconductor-insulator transition (SIT) in a high critical temperature cuprate system (Bi2Sr2−xLaxCaCu2O8+δ) exhibits a fundamentally different behavior than is expected from conventional SIT. At the critical doping, the sheet resistance seems to diverge in the zero-temperature limit. Above the critical doping, the transport is universally scaled by a two-component conductance model. Below, it continuously evolves from weakly to strongly insulating behavior. The two-component conductance model suggests that a collective electronic phase-separation mechanism may be responsible for this unconventional SIT behavior.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi2Sr2-xLaxCaCu2O8+δ

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—Pressure not reportedunknown
Bi2Sr1.56La0.44CaCu2O8+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

4.2Pressure not reportedonset

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