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Post-growth Fe deposition on the superconductivity of monolayer FeSe films on SrTiO3−δ

Xiaotong Jiao, Guanming Gong, Zhiyu Zhang, Wenfeng Dong, Cui Ding, Minghu Pan, Lili Wang, Qi-Kun Xue

DOI 10.1103/PhysRevMaterials.6.064803 · Physical Review Materials

T1

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Abstract

The superconductivity in bulk FeSe depends sensitively on the stoichiometry, ditto for the monolayer FeSe films grown on SrTiO3−δ and other substrates. To tune the stoichiometry, we deposit Fe onto monolayer FeSe films after epitaxial growth. Using in situ low-temperature scanning tunneling microscopy/spectroscopy, we find that the postdeposited Fe atoms incorporate into monolayer films and combine with excess Se to form FeSe, with an upper coverage limit of ∼0.4 unit-cell. Consequently, the superconducting gap concentrates in 10 to 12 meV. The work demonstrates a simple method for stoichiometry tuning and improving the spatial uniformity of monolayer FeSe films. Compared with the gap of ∼15 to 20 meV for the annealed films, the smaller superconducting gap indicates weakened FeSe-TiO2 coupling due to interfacial Se atom substitution.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
FeSe

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31Pressure not reportedonset
FeSe

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18Pressure not reportedzero_resistance
FeSe

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83Pressure not reportedonset

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