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Superconducting phase of TixOy thin films grown by molecular beam epitaxy

Yasemin Ozbek, Cooper Brooks, Xuanyi Zhang, Athby Al-Tawhid, Vladmir A. Stoica, Zhan Zhang, Divine P. Kumah

DOI 10.1103/PhysRevMaterials.6.064805 · Physical Review Materials

T1

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Abstract

We investigate the complex relationship between the growth conditions and the structural and transport properties of TixOy thin films grown by molecular beam epitaxy. Transport properties ranging from metallicity to superconductivity and insulating states are stabilized by effectively tuning the O/Ti ratio via the Ti flux rate and the O partial pressure POx for films grown on (0001)−Al2O3 substrates at 850∘ C. A cubic c−TiO1±δ buffer layer is formed for low O/Ti ratios, while a corundum cr−Ti2O3 layer is formed under higher-oxidizing conditions. Metallicity is observed for c−TiO1−δ buffer layers. The superconducting γ−Ti3O5 Magnéli phase is found to nucleate on a c−TiO1−δ buffer for intermediate POx conditions, and an insulator-superconducting transition is observed at 4.5 K (TConset=6K) for 85 nm thick films. Strain relaxation of γ−Ti3O5 occurs with increasing film thickness and correlates with a thickness-dependent increase in TC observed for TixOy thin films.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Ti3O5

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6Pressure not reportedonset
Ti3O5

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4.5Pressure not reportedzero_resistance
Ti3O5

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3.7Pressure not reportedonset
TiO

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2Pressure not reportedunknown
Ti2O3

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8Pressure not reportedunknown
TiO1+δ

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7.4Pressure not reportedunknown
Ti4O7

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3Pressure not reportedunknown

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