Growth windows of epitaxial NbNx films on c-plane sapphire and their structural and superconducting properties
John G. Wright, Huili Grace Xing, Debdeep Jena
DOI 10.1103/PhysRevMaterials.7.074803 · Physical Review Materials
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Abstract
NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the films are characterized to demonstrate that growth parameters such as substrate temperature and active nitrogen flux affect the structural phase of films, and thereby the superconducting critical temperature. Four phases of NbN are identified for films grown in different conditions. We demonstrate that atomically flat and highly crystalline β−Nb2N films can be grown at substrate temperatures of 1100∘C or higher, and that the superconducting critical temperature of phase-pure β−Nb2N films is 0.35<Tc<0.6 K for films grown at different substrate temperatures.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb2N Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.35 | Pressure not reported | midpoint |
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