Doubling the superconducting transition temperature of ultraclean wafer-scale aluminum nanofilms
Ching-Chen Yeh, Thi-Hien Do, Pin-Chi Liao, Chia-Hung Hsu, Yi-Hsin Tu, Hsin Lin, T.-R. Chang, Siang-Chi Wang, Yu-Yao Gao, Yu-Hsun Wu, Chu-Chun Wu, Yu An Lai, Ivar Martin, Sheng-Di Lin, Christos Panagopoulos, Chi-Te Liang
DOI 10.1103/PhysRevMaterials.7.114801 · Physical Review Materials
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Abstract
We studied the role of reduced dimensionality and disorder in the superconducting properties of wafer-scale aluminum (Al) nanofilms. This new generation of ultrathin films were grown using molecular beam epitaxy and depict normal-state sheet resistance at least 20 times lower than the quantum resistance h/(4e2). Defying general expectations, the superconducting transition temperature of our films increases with decreasing Al film thickness, reaching 2.4 K for a 3.5-nm-thick Al film grown on GaAs: twice that of bulk Al (1.2 K). Surface phonon softening is shown to impact superconductivity in pure ultrathin films, offering a route for materials engineering in two dimensions.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.4 | Pressure not reported | midpoint |
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.2 | Pressure not reported | unknown |
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