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Superconductivity in thin films of RuN

A. S. Ilin, A. O. Strugova, I. A. Cohn, V. V. Pavlovskiy, S. V. Zaitsev-Zotov, A. V. Sadakov, O. A. Sobolevskiy, L. A. Morgun, V. P. Matrovitskii, G. V. Rybalchenko

DOI 10.1103/PhysRevMaterials.8.074801 · Physical Review Materials

T1

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Abstract

Superconductivity has been found in RuN films obtained by reactive magnetron sputtering. This novel member of the metal nitride superconductors family has a critical temperature of the superconducting transition that varies depending on the substrate, ranging from 0.77 K to 1.29 K. The parameters of the crystal lattice of the superconducting films have been determined: The lattice is cubic with rhombohedral distortion along the normal to substrate surface with parameters a=b=c=4.559Å for RuN/SiO2, a=b=c=4.536Å for RuN/Si, and α=β=γ=87.96∘ for both films. The upper critical magnetic field at zero temperature Hc2(0)=2.3–4.1T found by extrapolation our experimental data collected at T⪆0.8 to zero temperature using the WHH model is near the upper paramagnetic limit. An s-wave single-band energy gap of Δ(0)=0.19meV was revealed by self-field critical current experiment at temperatures down to 10 mK.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
RuN

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1.29Pressure not reportedonset
RuN

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

0.77Pressure not reportedonset

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