Microwave Andreev bound state spectroscopy in a semiconductor-based Planar Josephson junction
Bassel Heiba Elfeky, Krishna Dindial, David S. Brandão, Bariş Pekerten, Jaewoo Lee, William M. Strickland, Patrick J. Strohbeen, Alisa Danilenko, Lukas Baker, Melissa Mikalsen, William Schiela, Zixuan Liang, Jacob Issokson, Ido Levy, Igor Žutić, Javad Shabani
DOI 10.1103/PhysRevResearch.7.013248 · Physical Review Research
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Abstract
By coupling a semiconductor-based planar Josephson junction to a superconducting microwave resonator, we investigate the Andreev bound states in the junction using dispersive readout techniques. Using electrostatic gating to create a narrow constriction in the junction, our measurements unveil a strong coupling interaction between the resonator and the Andreev bound states. This enables the mapping of isolated tunable Andreev bound states that can reach near-unity transparency along with an average induced superconducting gap of ∼150µeV. Exploring the gate parameter space further elucidates a nonmonotonic evolution of multiple Andreev bound states with varying gate voltage. Complementary tight-binding calculations of an Al-InAs planar Josephson junction with strong Rashba spin-orbit coupling provide insight into possible mechanisms responsible for such behavior. Our findings highlight the subtleties of the Andreev spectrum of Josephson junctions fabricated on superconductor-semiconductor heterostructures, offering potential applications in probing topological states in these hybrid platforms.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al-InAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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