Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode
Alex Hayat, Parisa Zareapour, Shu Yang F. Zhao, Achint Jain, Igor G. Savelyev, Marina Blumin, Zhijun Xu, Alina Yang, G. D. Gu, Harry E. Ruda, Shuang Jia, R. J. Cava, Aephraim M. Steinberg, Kenneth S. Burch
DOI 10.1103/PhysRevX.2.041019 · Physical Review X
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Abstract
We report the demonstration of hybrid high-Tc-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-Tc-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+δ combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+δ combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi2Sr2CaCu2O8+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 70 | Pressure not reported | unknown |
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