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Epitaxial integration of superconducting α-Sn films and topological insulator (Bi,Sb)2Te3

Haoyang Wu, Zongzheng Cao, Rui Wu, Jumei Jiang, Chong Liu, Yunyi Zang, Zhen Wang, Qi-Kun Xue, Ding Zhang

DOI 10.1103/jndq-cxmf · Physical Review Materials

T1

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Abstract

Realizing an epitaxial interface between a superconductor (SC) and a topological insulator (TI) is crucial for studying emergent quantum phenomena such as topological superconductivity. So far, this epitaxial heterostructure has been mainly investigated by growing TI films on SC substrates. Here, we reverse the order by epitaxially growing ultrathin films of α-Sn, a SC layer, on top of TIs. In situ scanning tunneling microscopy reveals that similar thin films of α-Sn (111), from monolayer to quintuple layer, can be realized on a wide range of substrates from n-type Bi2Te3 to p-type Sb2Te3. We obtain superconductivity with a transition temperature around 1 K from these heterostructures across the n-type to p-type crossover. The large spin-orbit coupling of our systems can give rise to enhanced in-plane upper critical magnetic field. Our work reveals the potential of employing the α−Sn/(Bi,Sb)2Te3 heterostructures for transport studies on emergent phenomena due to nontrivial topology.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Sn

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1.7Pressure not reportedonset
Sn

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1.5Pressure not reportedonset
Sn

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

0.5Pressure not reportedonset
Sn

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

1Pressure not reportedonset
Sn

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

1Pressure not reportedonset

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