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Modulation of superconductivity and superhardness in XB4C4 (X=Be,B,Al,Si,P, and Ti) borocarbides at ambient pressure

Qiwen Jiang, Zihao Huo, Zhengtao Liu, Ling Chen, Tiancheng Ma, Shuqing Jiang, Defang Duan, Tian Cui

DOI 10.1103/lswp-5cxx · Physical Review B

T1

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Abstract

Diamond and its doped materials have garnered widespread attention for their potential applications in superconductivity and superhardness. Here we introduce a class of heavily boron-doped diamond, XB4C4 (X=Be,B,Al,Si,P,Ti), stabilized by cation compensation. Using density functional theory, we perform high-throughput screening on 67 compounds and identify 6 that are dynamically and mechanically stable at ambient pressure. These materials offer a wide range of tunable properties through the substitution of guest atoms X in XB4C4: regulating the Fermi level and electronic density of states to achieve high-temperature superconductors, and altering covalent bond lengths and strengths to obtain superhard materials. Among them, BeB4C4 hosts a superconducting critical temperature (Tc) of 83 K, with an optimal Van Hove singularity, while B5C4 and SiB4C4 exhibits a hardness of ∼44 GPa. The current research findings establish stable heavy boron-doped diamonds with remarkable properties, paving the way for achieving high-temperature superconductivity and superhard performance at ambient pressure.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
BeB4C4

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83Pressure unresolvedunknown
B5C4

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29Pressure unresolvedunknown
H3S

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203155 GPaunknown
LaH10

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250170 GPaunknown
YH6

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224166 GPaunknown
CaH6

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215172 GPaunknown
YH9

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243201 GPaunknown
KPbB6C6

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88Pressure not reportedunknown

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