Pressure-driven amorphous superconductivity in the topological semimetal VP4
Na Zuo, Bowen Zheng, Chutong Zhang, Xiangzhuo Xing, Yalei Huang, Haoran Yu, Bin Li, Xiaolei Yi, Yan Meng, Xiaoran Zhang, Bingchao Yang, Xin Chen, Xiaofeng Xu, Xiaobing Liu
DOI 10.1103/rc5t-65bw · Physical Review B
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Abstract
Engineering superconductivity in pressurized topological materials is widely recognized as a promising pathway for achieving topological superconductivity. Herein, we report the pressure-tuned evolution of the structural and electronic properties of the topological semimetal VP4. Our results demonstrate that the crystal structure remains stable up to approximately 47.2 GPa, beyond which an irreversible transition to an amorphous phase takes place. Notably, the onset of amorphization is accompanied by a concurrent transition in carrier-type from holes to electrons, coupled with the emergence of superconductivity. This phenomenon provides direct evidence for pressure-induced amorphous superconductivity. With further compression, the superconducting transition temperature Tc increases monotonically, reaching a maximum of ∼4.9 K under a pressure of around 76.5 GPa. Additionally, density functional theory calculations reveal that the topologically nontrivial state persists under pressure, retaining strong topological characteristics throughout the crystalline phase. Our findings establish VP4 as a distinctive platform for investigating the interplay among amorphous, superconductivity, and topology.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| VP4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.9 | 76.5 GPa | onset |
| VP4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.9 | 61.3 GPa | onset |
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