General Framework Enabling Polarity-Tunable Time-Reversal Symmetric Superconducting Diode Effects in Gate-Defined Homojunctions

Abstract

Symmetry breaking underlies various nonreciprocal transport phenomena. A well-known example is the semiconductor p−n junction diode, a cornerstone of modern electronics. Its superconducting counterpart—the superconducting diode effect (SDE)—has recently attracted intense interest due to its potential in ultra-low-power superconducting circuits. While most SDEs reported so far involve either explicit or spontaneous breaking of time-reversal symmetry (TRS), a comprehensive theoretical framework remains elusive. Moreover, a general mechanism enabling TRS-preserving SDEs with minimal dependence on material or device architecture has yet to be established. Here, we report polarity-tunable SDEs without breaking TRS, realized in superconducting n−n, p−n, and p−p homojunctions defined via local protonic gates in multilayer NbSe2. The local gates induce partial proton intercalation, generating a built-in proton concentration gradient across the transition zone between the gated and ungated regions—closely resembling the depletion layer in conventional semiconductor diodes. We find that the observed SDE arises from electric-field-driven variation of the proton concentration gradient in the transition region, which asymmetrically modulates the critical current: suppressing it in one direction and enhancing it in the other. This local-gate-driven, TRS-preserving mechanism offers a general and scalable strategy for realizing nonreciprocal superconducting transport. Our findings establish a material-agnostic platform for SDEs, broadly applicable across two-dimensional (2D) superconductors.

Source-reported materials — not catalogue approval

Similar papers