Quantum Interference Effects in InAs Semiconductor Nanowires
Yong-Joo Doh, Aarnoud L. Roest, Erik P. A. M. Bakkers, Silvano De Franceschi, Leo P. Kouwenhoven
arXiv:0712.4298 · DOI 10.3938/jkps.54.135 · 2007-12-28 · arXiv: Mesoscale and Nanoscale Physics
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Abstract
We report quantum interference effects in InAs semiconductor nanowires strongly coupled to superconducting electrodes. In the normal state, universal conductance fluctuations are investigated as a function of magnetic field, temperature, bias and gate voltage. The results are found to be in good agreement with theoretical predictions for weakly disordered one-dimensional conductors. In the superconducting state, the fluctuation amplitude is enhanced by a factor up to ~ 1.6, which is attributed to a doubling of charge transport via Andreev reflection. At a temperature of 4.2 K, well above the Thouless temperature, conductance fluctuations are almost entirely suppressed, and the nanowire conductance exhibits anomalous quantization in steps of e^{2}/h.
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