Indirect electric field doping of the CuO2 planes of the cuprate NdBa2Cu3O7 superconductor
M. Salluzzo, G. Ghiringhelli, J. C. Cezar, N. B. Brookes, G. M. De Luca, F. Fracassi, R. Vaglio
arXiv:0801.1878 · DOI 10.1103/PhysRevLett.100.056810 · 2008-01-14 · Physical review letters
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Abstract
The mechanism of field-effect doping in the "123" high critical temperature superconductors (HTS) has been investigated by x-ray absorption spectroscopy in the presence of an electric field. We demonstrate that holes are created at the CuO chains of the charge reservoir and that field-effect doping of the CuO2 planes occurs by charge transfer, from the chains to the planes, of a fraction of the overall induced holes. The electronic properties of the charge reservoir and of the dielectric/HTS interface determine the electric field doping of the CuO2 planes
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| NdBa2Cu3O7 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 20 | Pressure not reported | unknown |
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