Layered Structures Favor Superconductivity in Compressed Solid SiH$_{4}$
X. J. Chen, J. L. Wang, V. V. Struzhkin, H. K. Mao, R. J. Hemley, H. Q. Lin
arXiv:0803.2713 · 2008-03-18 · arXiv: Superconductivity
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Abstract
The electronic and lattice dynamical properties of compressed solid SiH$_{4}$ have been calculated in the pressure range up to 300 GPa with density functional theory. We find that structures having a layered network with eight-fold SiH$_{8}$ coordination favor metallization and superconductivity. SiH$_{4}$ in these layered structures is predicted to have superconducting transition temperatures ranging from 20 to 80 K, thus presenting new possibilities for exploring high temperature superconductivity in this hydrogen-rich system.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| SiH4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 50 | Pressure not reported | unknown |
| SiH4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 166 | 202 GPa | unknown |
| SiH4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 50 | 125 GPa | unknown |
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