Electron-hole Asymmetry and Quantum Critical Point in Hole-doped BaFe$_2$As$_2$

Gang Xu; Haijun Zhang; Xi Dai; Zhong Fang

doi:10.1209/0295-5075/84/67015

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Electron-hole Asymmetry and Quantum Critical Point in Hole-doped BaFe$_2$As$_2$

Gang Xu, Haijun Zhang, Xi Dai, Zhong Fang

arXiv:0807.1401 · DOI 10.1209/0295-5075/84/67015 · 2008-07-09 · EPL (Europhysics Letters)

T1theoretical44 citations

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Abstract

We show, from first-principles calculations, that the hole-doped side of FeAs-based compounds is different from its electron-doped counterparts. The electron side is characterized as Fermi surface nesting, and SDW-to-NM quantum critical point (QCP) is realized by doping. For the hole-doped side, on the other hand, orbital-selective partial orbital ordering develops together with checkboard antiferromagnetic (AF) ordering without lattice distortion. A unique SDW-to-AF QCP is achieved, and $J_2$=$J_1/2$ criteria (in the approximate $J_1&J_2$ model) is satisfied. The observed superconductivity is located in the vicinity of QCP for both sides.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Ba1-xKxFe2As2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	38	Pressure not reported	unknown
Sr1-xKxFe2As2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	38	Pressure not reported	unknown