General Rule and Materials Design of Negative Effective U System for High-T_c Superconductivity
Hiroshi Katayama-Yoshida, Koichi Kusakabe, Hidetoshi Kizaki, Akitaka Nakanishi
arXiv:0807.3770 · DOI 10.1143/APEX.1.081703 · 2008-07-24 · Applied Physics Express
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Abstract
Based on the microscopic mechanisms of (1) charge-excitation-induced negative effective U in s^1 or d^9 electronic configurations, and (2) exchange-correlation-induced negative effective U in d^4 or d^6 electronic configurations, we propose a general rule and materials design of negative effective U system in itinerant (ionic and metallic) system for the realization of high-T_c superconductors. We design a T_c-enhancing layer (or clusters) of charge-excitation-induced negative effective $U$ connecting the superconducting layers for the realistic systems.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Li Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 20 | Pressure not reported | unknown |
| Ca Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 25 | Pressure not reported | unknown |
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