Suspended single-electron transistors: fabrication and measurement
G. S. Paraoanu, A. M. Halvari
arXiv:0808.3343 · DOI 10.1063/1.1870108 · 2008-08-25 · Applied Physics Letters
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Abstract
We have fabricated aluminum single-electron transistors in which the island is not in contact with the substrate. This new type of device, which can be called suspended single-electron transistor (SUSET), displayed well-defined I-V and dI/dV-V features typical for high-quality standard SET's.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.9 | Pressure not reported | onset |
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