Doping dependence of upper critical field and Hall resistivity in LaFeAsO1-xFx
Y. Kohama, Y. Kamihara, S. A. Baily, L. Civale, S. C. Riggs, F. F. Balakirev, T. Atake, M. Jaime, M. Hirano, H. Hosono
arXiv:0809.1133 · DOI 10.1103/PhysRevB.79.144527 · 2008-09-06 · Physical Review B
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Abstract
The electrical resistivity (Rxx) and Hall resistivity (Rxy) of LaFeAsO1-xFx have been measured over a wide fluorine doping range 0 =< x =< 0.14 using 60 T pulsed magnets. While the superconducting phase diagram (Tc, x) displays the classic dome-shaped structure, we find that the resistive upper critical field (Hc2) increases monotonically with decreasing fluorine concentration, with the largest Hc2 >= 75 T for x = 0.05. This is reminiscent of the composition dependence in high-Tc cuprates and might correlate with opening of a pseudo-gap in the underdoped region. Further, the temperature dependence of Hc2(T) for superconducting samples can be understood in terms of multi-band superconductivity. Rxy data for non-superconducting samples show non-linear field dependence, which is also consistent with a multi-carrier scenario.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| LaFeAsO1-xFx Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| LaFeAsO0.95F0.05 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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