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Superconductivity in heavily boron-doped silicon carbide

M. Kriener, T. Muranaka, J. Kato, Z. A. Ren, J. Akimitsu, Y. Maeno

arXiv:0810.0056 · DOI 10.1088/1468-6996/9/4/044205 · 2008-10-01 · Science and Technology of Advanced Materials

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Abstract

The discoveries of superconductivity in heavily boron-doped diamond (C:B) in 2004 and silicon (Si:B) in 2006 renew the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily-boron doped silicon carbide (SiC:B). The sample used for that study consists of cubic and hexagonal SiC phase fractions and hence this lead to the question which of them participates in the superconductivity. Here we focus on a sample which mainly consists of hexagonal SiC without any indication for the cubic modification by means of x-ray diffraction, resistivity, and ac susceptibility.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
CB

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4.5Pressure not reportedunknown
CB

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11.4Pressure not reportedunknown
SiB

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0.4Pressure not reportedunknown
SiCB

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1.5Pressure not reportedzero_resistance
SiCB

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1.5Pressure not reportedonset
SiCB

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1.5Pressure not reportedunknown
SiCB

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1.5Pressure not reportedonset
SiCB

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1.45Pressure not reportedunknown

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