Reduced leakage current in Josephson tunnel junctions with codeposited barriers
Paul B. Welander, Timothy J. McArdle, James N. Eckstein
arXiv:0812.3636 · DOI 10.1063/1.3518983 · 2008-12-18 · Applied Physics Letters
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Abstract
Josephson junctions were fabricated using two different methods of barrier formation. The trilayers employed were Nb/Al-AlOx/Nb on sapphire, where the first two layers were epitaxial. The oxide barrier was formed either by exposing the Al surface to O2 or by codepositing Al in an O2 background. The codeposition process yielded junctions that showed the theoretically predicted subgap current and no measurable shunt conductance. In contrast, devices with barriers formed by thermal oxidation showed a small shunt conductance in addition to the predicted subgap current.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | — |
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | — |
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