Excess dissipation in a single-electron box: The Sisyphus resistance
F. Persson, C. M. Wilson, M. Sandberg, G. Johansson, P. Delsing
arXiv:0902.4316 · DOI 10.1021/nl903887x · 2009-02-25 · Nano letters
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Abstract
We present measurements of the ac response of a single-electron box (SEB). We apply an rf signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.
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