Multi-band conductivity and multi-gap superconductivity in V3Si from optical measurements on films at terahertz frequencies
A. Perucchi, D. Nicoletti, M. Ortolani, C. Marini, R. Sopracase, S. Lupi, U. Schade, M. Putti, I. Pallecchi, C. Tarantini, M. Ferretti, C. Ferdeghini, M. Monni, F. Bernardini, S. Massidda, P. Dore
arXiv:0907.3639 · DOI 10.1103/PhysRevB.81.092509 · 2009-07-21 · Physical Review B
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Abstract
The possibility of multi-band conductivity and multi-gap superconductivity is explored in oriented V3Si thin films by means of reflectance and transmittance measurements at terahertz frequencies. The temperature dependence of the transmittance spectra in the normal state gives evidence of two bands contributing to the film conductivity. This outcome is consistent with electronic structure calculations performed within density functional theory. On this basis, we performed a detailed data analysis and found that all optical data can be consistently accounted for within a two-band framework, with the presence of two optical gaps in the superconducting state corresponding to 2D=kTc values close to 1.8 and 3.8.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| V3Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 16.1 | Pressure not reported | unknown |
| V3Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 15.3 | Pressure not reported | unknown |
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