Tc=21K in epitaxial FeSe0.5Te0.5 thin films with biaxial compressive strain
E. Bellingeri, I. Pallecchi, R. Buzio, A. Gerbi, D. Marre', M. R. Cimberle, M. Tropeano, M. Putti, A. Palenzona, C. Ferdeghini
arXiv:0912.0876 · DOI 10.1063/1.3358148 · 2009-12-04 · Applied Physics Letters
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Abstract
High purity epitaxial FeSe0.5Te0.5 thin films with different thickness were grown by Pulsed Laser Ablation on different substrates. By varying the film thickness, Tc up to 21K were observed, significantly larger than the bulk value. Structural analyses indicated that the a axis changes significantly with the film thickness and is linearly related to the Tc. The latter result indicates the important role of the compressive strain in enhancing Tc. Tc is also related to both the Fe-(Se,Te) bond length and angle, suggesting the possibility of further enhancement.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| FeSe0.5Te0.5 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 21 | Pressure not reported | unknown |
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