The metal-insulator transition and lattice distortion in semiconductors

Fedor V. Prigara

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The metal-insulator transition and lattice distortion in semiconductors

Fedor V. Prigara

arXiv:1001.3061 · 2010-01-18 · arXiv: Superconductivity

T4theoretical

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Abstract

A relation between the energy of an elementary `insulating' excitation corresponding to the metal-insulator transition and the bandgap width in a semiconductor is obtained. An effect of atomic relaxation on the temperature and pressure dependence of the bandgap width is considered. It is shown that the metal-insulator transition in a semiconductor causes a weak rhombohedral or monoclinic distortion in the case of a diamond and zincblende structure and a weak tetragonal or orthorhombic distortion in the case of a rocksalt structure. A change in the bandgap associated with a ferroelectric (antiferroelectric) transition in a semiconductor is also obtained.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Ba1-xKxBiO3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	30	Pressure not reported	unknown
La2CuO4.093 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	45	Pressure not reported	unknown
(Ca1-xSrx)2RuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	10	Pressure not reported	unknown