Photon assisted tunneling as an origin of the Dynes density of states
J. P. Pekola, V. F. Maisi, S. Kafanov, N. Chekurov, A. Kemppinen, Yu. A. Pashkin, O. -P. Saira, M. Mottonen, J. S. Tsai
arXiv:1001.3853 · 2010-01-21
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Abstract
We show that the effect of a high-temperature environment in current transport through a normal metal-insulator-superconductor tunnel junction can be described by an effective density of states (DOS) in the superconductor. In the limit of a resistive low-ohmic environment, this DOS reduces into the well-known Dynes form. Our theoretical result is supported by experiments in engineered environments. We apply our findings to improve the performance of a single-electron turnstile, a potential candidate for a metrological current source.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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