InAs nanowire hot-electron Josephson transistor

S. Roddaro; A. Pescaglini; D. Ercolani; L. Sorba; F. Giazotto; F. Beltram

doi:10.1007/s12274-010-0077-6

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InAs nanowire hot-electron Josephson transistor

S. Roddaro, A. Pescaglini, D. Ercolani, L. Sorba, F. Giazotto, F. Beltram

arXiv:1003.2140 · DOI 10.1007/s12274-010-0077-6 · 2010-03-10

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Abstract

At a superconductor (S)-normal metal (N) junction pairing correlations can "leak-out" into the N region. This proximity effect [1, 2] modifies the system transport properties and can lead to supercurrent flow in SNS junctions [3]. Recent experimental works showed the potential of semiconductor nanowires (NWs) as building blocks for nanometre-scale devices [4-7], also in combination with superconducting elements [8-12]. Here, we demonstrate an InAs NW Josephson transistor where supercurrent is controlled by hot-quasiparticle injection from normal-metal electrodes. Operational principle is based on the modification of NW electron-energy distribution [13-20] that can yield reduced dissipation and high-switching speed. We shall argue that exploitation of this principle with heterostructured semiconductor NWs opens the way to a host of out-of-equilibrium hybrid-nanodevice concepts [7, 21].