Carrier Localization, Metal-Insulator Transitions and Stripe Formation in Inhomogeneous Hole-Doped Cuprates
Dzhumanov, S., Ganiev, O. K., Khudayberdiev, Z. S.
arXiv:1008.2256 · 2010-08-16
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Abstract
We propose a unified approach for describing the carrier localization, metal-insulator transitions (MITs) and stripe formation in high-$T_c$ cuprates. The ground-state energy of a carrier interacting with a defect and with lattice vibrations is calculated within the continuum model and adiabatic approximation. At low doping levels, hole carriers in $\rm{La}$-based systems with large-radius dopants are localized near the dopants with the formation of hydrogenic impurity centers.
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