Correlation-induced band suppression in the two-orbital Hubbard model

E Plekhanov; A Avella; F Mancini; F P Mancini

Correlation-induced band suppression in the two-orbital Hubbard model

E Plekhanov, A Avella, F Mancini, F P Mancini

arXiv:1009.4448 · 2010-09-22

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Abstract

The orbital degrees of freedom are of vital importance in explanation of various phenomena. Among them is the orbital-selective Mott transition (OSMT), which is thought to occur in several materials as Ca$_{2-x}$Sr$_x$RuO$_4$ and La$_{n+1}$Ni${_n}$O$_{3n+1}$. OSMT is usually studied in the infinite-dimension limit, and for the time being, it is not clear if it could survive in one-dimensional (1D) case. There exist two scenarios for the OSMT: upon increasing the interaction in a two-band system i) one of the bands becomes insulating, while the other remains metallic and ii) one of the bands becomes empty, while the other may eventually undergo a single-band Mott insulator transition. In this work, we present a preliminary study of the two-orbital Hubbard model by means of Density Matrix Renormalization Group in 1D at quarter-filling, where the second scenario seems to be realized. In particular, we study the orbital densities, double occupancies and form-factors also in the case of finite inter-orbital inter-site hopping.