Single-charge escape processes through a hybrid turnstile in a dissipative environment
Sergey V Lotkhov, Olli-Pentti Saira, Jukka P Pekola, Alexander B Zorin
arXiv:1010.2168 · DOI 10.1088/1367-2630/13/1/013040 · 2010-10-11 · New Journal of Physics
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Abstract
We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducting trapping island on the other side. The electron hold times, t ~ 2-20s, in our two-junction circuit are comparable with those of typical multi-junction, N >= 4, normal-metal single-electron tunneling devices. A semi-phenomenological model of the environmental activation of tunneling is applied for the analysis of the switching statistics. The experimental results are promising for electrical metrology.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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