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Disorder induced superconducting ratchet effect in nanowires

Shachaf Poran, Efrat Shimshoni, Aviad Frydman

arXiv:1012.5609 · DOI 10.1103/PhysRevB.84.014529 · 2010-12-27 · Physical Review B

T1theoretical17 citations

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Abstract

A dc voltage drop develops along amorphous indium oxide nanowires that are exposed to an ac bias source. This voltage is anti-symmetric with magnetic field and is characterized by sample specific quasi-periodic magneto-voltage oscillations. The voltage magnitude increases with decreasing temperature below $T_{C}$ but saturates at low T. As the disorder of the sample is decreased, the dc voltage is suppressed. We suggest that this rectification is a manifestation of the superconducting ratchet effect in which disorder and geometrical confinement play the role of asymmetric pinning centers. This effect demonstrates the importance of inherent inhomogeneity and vortex motion in the superconductor-insulator transition of disordered superconductors.

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FormulaReported Tc (K)Pressure (GPa)Type
InO

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—Pressure not reportedunknown

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