Introduction of a DC Bias into a High-Q Superconducting Microwave Cavity

Fei Chen; A. J. Sirois; R. W. Simmonds; A. J. Rimberg

Introduction of a DC Bias into a High-Q Superconducting Microwave Cavity

Fei Chen, A. J. Sirois, R. W. Simmonds, A. J. Rimberg

arXiv:1101.4218 · 2011-01-21

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Abstract

We report a technique for applying a dc voltage or current bias to the center conductor of a high-quality factor superconducting microwave cavity without significantly disturbing selected cavity modes. This is accomplished by incorporating dc bias lines into the cavity at specific locations. The measured S-matrix parameters of the system are in good agreement with theoretical predictions and simulations. We find that at 4 K the quality factor of the cavity degrades by less than 1% under the application of a dc bias.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown