Evidence for semiconducting behavior with a narrow band gap of Bernal graphite

N. García; P. Esquinazi; J. Barzola-Quiquia; S. Dusari

doi:10.1088/1367-2630/14/5/053015

← Back to search

Evidence for semiconducting behavior with a narrow band gap of Bernal graphite

N. García, P. Esquinazi, J. Barzola-Quiquia, S. Dusari

arXiv:1106.0437 · DOI 10.1088/1367-2630/14/5/053015 · 2011-06-02 · New Journal of Physics

T370 citations

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

We have studied the resistivity of a large number of highly oriented graphite samples with areas ranging from several mm$^2$ to a few $μ$m$^2$ and thickness from $\sim 10 $nm to several tens of micrometers. The measured resistance can be explained by the parallel contribution of semiconducting graphene layers with low carrier density $< 10^9$ cm$^{-2}$ and the one from metallic-like internal interfaces. The results indicate that ideal graphite with Bernal stacking structure is a narrow-gap semiconductor with an energy gap $E_g \sim 40 $meV.