Specific heat and $μ$SR study on the noncentrosymmetric superconductor LaRhSi3
V. K. Anand, A. D. Hilier, D. T. adroja, A. Strydom, H. Michor, K. A. McEwen, B. D. Rainford
arXiv:1108.0193 · DOI 10.1103/PhysRevB.83.064522 · 2011-07-31 · Physical Review B
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Abstract
We have investigated the superconducting properties of the noncentrosymmetric superconductor LaRhSi$_{3}$ by performing magnetization, specific heat, electrical resistivity and muon spin relaxation ($μ$SR) measurements. LaRhSi$_{3}$ crystallizes with the BaNiSn$_{3}$-type tetragonal structure (space group \textit{I4 mm}) as confirmed through our neutron diffraction study. Magnetic susceptibility, electrical resistivity and specific heat data reveal a sharp and well defined superconducting transition at $T_{c}$ = 2.16 $\pm$ 0.08 K. The low temperature specific heat data reveal that LaRhSi$_{3}$ is a weakly coupled bulk BCS superconductor and has an s-wave singlet ground state with an isotropic energy gap of $\sim$ 0.3 meV, $2 Δ_{0} /k_{B}T_{c}$ = 3.24. The specific heat data measured in applied magnetic field strongly indicate a type-I behaviour. Type-I superconductivity in this compound is also inferred from the Ginzburg-Landau parameter, $κ$ = 0.25. Various superconducting parameters, including the electron-phonon coupling strength, penetration depth and coherence length, characterize LaRhSi$_{3}$ as a moderate dirty-limit superconductor. A detailed study of the magnetic field-temperature ($H-T$) phase diagram is presented and from a consideration of the free energy, the thermodynamic critical field, $H_{c0}$ is estimated to be 17.1 $\pm$ 0.1 mT, which is in very good agreement with that estimated from the transverse field $μ$SR measurement that gives $H_{c0}$ = 17.2 $\pm$ 0.1 mT. The transverse field $μ$SR results are consistent with conventional type-I superconductivity in this compound. Further, the zero-field $μ$SR results indicate that time reversal symmetry is preserved when entering the superconducting state, also supporting a singlet pairing superconducting ground state in LaRhSi$_{3}$.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| LaRhSi3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.16 | Pressure unresolved | unknown |
| LaRhSi3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.16 | Pressure unresolved | unknown |
| LaRhSi3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.16 | Pressure unresolved | unknown |
| LaRhSi3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | onset |
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