Sub-micrometer epitaxial Josephson junctions for quantum circuits
Jeffrey S. Kline, Michael R. Vissers, Fabio C. S. da Silva, David S. Wisbey, Martin Weides, Terence J. Weir, Benjamin Turek, Danielle A. Braje, William D. Oliver, Yoni Shalibo, Nadav Katz, Blake R. Johnson, Thomas A. Ohki, David P. Pappas
arXiv:1108.1830 · DOI 10.1088/0953-2048/25/2/025005 · 2011-08-08 · Superconductor Science and Technology
Active bibliographic source — not scientific approval
Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.
Abstract
We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top electrodes. While room-temperature (295 K) resistance versus area data are favorable for both types of top electrodes, the low-temperature (50 mK) data show that junctions with the Al top electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates to improved qubit performance.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.1 | Pressure not reported | unknown |
| Re Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.5 | Pressure not reported | unknown |
Similar papers
Elimination of two level fluctuators in superconducting quantum bits by an epitaxial tunnel barrier
similarity 0.89Seongshik Oh et al.
Source status unknown — claims are unverified
Shadow evaporation of epitaxial Al/Al2O3/Al tunnel junctions on sapphire utilizing an inorganic bilayer mask
similarity 0.89Paul B. Welander et al. · 2012 · arXiv:1203.6007
Source status unknown — claims are unverified
Concentric transmon qubit featuring fast tunability and an anisotropic magnetic dipole moment
similarity 0.89Jochen Braumüller et al. · 2015 · arXiv:1509.08014
Source status unknown — claims are unverified
Advanced superconducting circuits and devices
similarity 0.89Martin Weides & Hannes Rotzinger · 2014 · arXiv:1402.6857
Source status unknown — claims are unverified
Phase qubits fabricated with trilayer junctions
similarity 0.87M. Weides et al. · 2010 · arXiv:1101.0232
Source status unknown — claims are unverified
Reducing quantum-regime dielectric loss of silicon nitride for superconducting quantum circuits
similarity 0.87Hanhee Paik & Kevin D. Osborn · 2009 · arXiv:0908.2948
Source status unknown — claims are unverified