Pressure Induced Metallization of BaMn2As2

A. T. Satya; Awadhesh Mani; A. Arulraj; N. V. Chandra Shekar; K. Vinod; C. S. Sundar; A. Bharathi

Pressure Induced Metallization of BaMn2As2

A. T. Satya, Awadhesh Mani, A. Arulraj, N. V. Chandra Shekar, K. Vinod, C. S. Sundar, A. Bharathi

arXiv:1110.4969 · 2011-10-22

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Abstract

The temperature and pressure dependent electrical resistivity rho(T,P) studies have been performed on BaMn2As2 single crystal in the 4.2 to 300 K range upto of 8.2 GPa to investigate the evolution of its ground state properties. The rho(T) shows a negative co-efficient of resistivity under pressure upto 3.2 GPa. The occurrence of an insulator to metal transition (MIT) in an external P ~4.5 GPa is indicated by a change in the temperature co-efficient in the rho(T) data at ~36 K . However complete metallization in entire temperature range is seen at a P~5.8 GPa. High pressure XRD studies carried out at room temperature also shows an anomaly in the pressure versus volume curve around P ~ 5 GPa, without a change in crystal structure, indicative of an electronic transition. Further, a clear precipitous drop in rho(T) at ~17 K is seen for P ~5.8 GPa which suggests the possibility of the system going over to a superconducting ground state.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
BaMn2As2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	17	5.8 GPa	onset