Sign-reversal of the in-plane resistivity anisotropy in hole-doped iron pnictides
E. C. Blomberg, M. A. Tanatar, R. M. Fernandes, Bing Shen, Hai-Hu Wen, J. Schmalian, R. Prozorov
arXiv:1202.4430 · DOI 10.1038/ncomms2933 · 2012-02-20
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Abstract
The in-plane anisotropy of the electrical resistivity across the coupled orthorhombic and magnetic transitions of the iron pnictides has been extensively studied in the parent and electron-doped compounds. All these studies universally show that the resistivity $ρ_{a}$ across the long orthorhombic axis $a_{O}$ - along which the spins couple antiferromagnetically below the magnetic transition temperature - is smaller than the resistivity $ρ_{b}$ of the short orthorhombic axis $b_{O}$, i. e. $ρ_{a}<ρ_{b}$. Here we report that in the hole-doped compounds Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$, as the doping level increases, the resistivity anisotropy initially becomes vanishingly small, and eventually changes sign for sufficiently large doping, i. e. $ρ_{b}<ρ_{a}$. This observation is in agreement with a recent theoretical prediction that considers the anisotropic scattering of electrons by spin-fluctuations in the orthorhombic/nematic state.
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