Tungsten silicide films for microwave kinetic inductance detectors

Thomas Cecil; Antonino Miceli; Orlando Quaranta; Chian Liu; Daniel Rosenmann; Sean McHugh; Benjamin Mazin

doi:10.1109/TASC.2012.2232963

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Tungsten silicide films for microwave kinetic inductance detectors

Thomas Cecil, Antonino Miceli, Orlando Quaranta, Chian Liu, Daniel Rosenmann, Sean McHugh, Benjamin Mazin

arXiv:1203.5064 · DOI 10.1109/TASC.2012.2232963 · 2012-03-22 · IEEE Transactions on Applied Superconductivity

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Abstract

Microwave Kinetic Inductance Detectors (MKIDs) provide highly multiplexed arrays of detectors that can be configured to operate from the sub-millimeter to the X-ray regime. We have examined two tungsten silicide alloys (W5Si3 and WSi2), which are dense alloys that provide a critical temperature tunable with composition, large kinetic inductance fraction, and high normal-state resistivity. We have fabricated superconducting resonators and provide measurement data on critical temperature, surface resistance, quality factor, noise, and quasiparticles lifetime. Tungsten silicide appears to be promising for microwave kinetic inductance detectors.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
W5Si3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown
WSi2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown