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On the critical temperature and the energy gap in dense SiH4(H2)2 at 250 GPa

R. Szczȩśniak, A. P. Durajski

arXiv:1208.4258 · DOI 10.1016/j.ssc.2012.10.015 · 2012-08-21 · Solid State Communications

T1theoretical17 citations

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Abstract

The critical temperature ($T_{C}$) and the energy gap ($2Δ(T)$) for the superconductor SiH$_4$(H$_2$)$_2$ at 250 GPa have been calculated. The wide range of the Coulomb pseudopotential's values has been considered: $μ^{\star}\in<0.1,0.3>$. It has been stated that $T_{C}$ decreases together with the increase of $μ^{\star}$ from 129.83 K to 81.40 K. The low-temperature energy gap ($T\sim 0$ K) decreases together with the increase of the Coulomb pseudopotential from 50.96 meV to 30.12 meV. The high values of $2Δ(0)$ mean that the dimensionless ratio $R_Δ\equiv 2Δ(0)/k_{B}T_{C}$ significantly exceeds the value predicted by the classical BCS theory. In the considered case: $R_Δ\in<4.55,4.29>$. Due to the unusual dependence of the critical temperature and the energy gap on $μ^{\star}$, the analytical expressions for $T_{C}(μ^{\star})$ and $Δ(μ^{\star})$ have been given.

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FormulaReported Tc (K)Pressure (GPa)Type
SiH4(H2)2

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129.83250 GPaunknown
SiH4(H2)2

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81.4250 GPaunknown
SiH4(H2)2

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107250 GPaunknown
H2

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240450 GPaunknown
SiH4

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1796 GPaunknown
SiH4

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17120 GPaunknown

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