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Scanning tunneling spectroscopy of layers of superconducting 2H-TaSe$_\textbf{2}$: Evidence for a zero bias anomaly in single layers

J. A. Galvis, P. Rodière, I. Guillamón, M. R. Osorio, J. G. Rodrigo, L. Cario, E. Navarro-Moratalla, E. Coronado, S. Vieira, H. Suderow

arXiv:1210.2659 · DOI 10.1103/PhysRevB.87.094502 · 2012-10-09 · Physical Review B

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Abstract

We report a characterization of surfaces of the dichalcogenide TaSe$_2$ using scanning tunneling microscopy and spectroscopy (STM/S) at 150 mK. When the top layer has the 2H structure and the layer immediately below the 1T structure, we find a singular spatial dependence of the tunneling conductance below 1 K, changing from a zero bias peak on top of Se atoms to a gap in between Se atoms. The zero bias peak is additionally modulated by the commensurate $3a_0 \times 3a_0$ charge density wave of 2H-TaSe$_2$. Multilayers of 2H-TaSe$_2$ show a spatially homogeneous superconducting gap with a critical temperature also of 1 K. We discuss possible origins for the peculiar tunneling conductance in single layers.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
TaSe2

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1Pressure not reportedunknown
TaSe2

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0.15Pressure not reportedunknown
NbSe2

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9Pressure not reportedunknown
NbS2

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9Pressure not reportedunknown

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