Electrostatic Tuning of the Properties of Disordered Indium Oxide Films near the Superconductor-Insulator Transition
Yeonbae Lee, Aviad Frydman, Tianran Chen, Brian Skinner, A. M. Goldman
arXiv:1212.5177 · DOI 10.1103/PhysRevB.88.024509 · 2012-12-20 · Physical Review B
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Abstract
The evolution with carrier concentration of the electrical properties of amorphous indium oxide (InO) thin films has been studied using electronic double layer transistor configurations. Carrier variations of up to 7 X 10^(14) carriers/cm^2 were achieved using an ionic liquid as a gate dielectric. The superconductor-insulator transition was traversed and the magnitude and position of the large magnetoresistance peak found in the insulating regime were modified. The systematic variation of the magnetoresistance peak with charge concentration was found to be qualitatively consistent with a simulation based on a model involving granularity.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| InOx Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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