Tuning electronic structures via epitaxial strain in Sr2IrO4 thin films

J. Nichols; J. Terzic; E. G. Bittle; O. B. Korneta; L. E. De Long; J. W. Brill; G. Cao; S. S. A. Seo

doi:10.1063/1.4801877

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Tuning electronic structures via epitaxial strain in Sr2IrO4 thin films

J. Nichols, J. Terzic, E. G. Bittle, O. B. Korneta, L. E. De Long, J. W. Brill, G. Cao, S. S. A. Seo

arXiv:1302.0918 · DOI 10.1063/1.4801877 · 2013-02-05 · Applied Physics Letters

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Abstract

We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and studied their electronic structures as a function of lattice-strains. Under tensile (compressive) strains, increased (decreased) Ir-O-Ir bond-angles are expected to result in increased (decreased) electronic bandwidths. However, we have observed that the two optical absorption peaks near 0.5 eV and 1.0 eV are shifted to higher (lower) energies under tensile (compressive) strains, indicating that the electronic-correlation energy is also affected by in-plane lattice-strains. The effective tuning of electronic structures under lattice-modification provides an important insight into the physics driven by the coexisting strong spin-orbit coupling and electronic correlation.