Gate defined wires in HgTe quantum wells: from Majorana fermions to spintronics
Johannes Reuther, Jason Alicea, Amir Yacoby
arXiv:1303.1207 · DOI 10.1103/PhysRevX.3.031011 · 2013-03-05 · arXiv: Mesoscale and Nanoscale Physics
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Abstract
We introduce a promising new platform for Majorana zero-modes and various spintronics applications based on gate-defined wires in HgTe quantum wells. Due to the Dirac-like band structure for HgTe the physics of such systems differs markedly from that of conventional quantum wires. Most strikingly, we show that the subband parameters for gate-defined HgTe wires exhibit exquisite tunability: modest gate voltage variation allows one to modulate the Rashba spin-orbit energies from zero up to ~30K, and the effective g-factors from zero up to giant values exceeding 600. The large achievable spin-orbit coupling and g-factors together allow one to access Majorana modes in this setting at exceptionally low magnetic fields while maintaining robustness against disorder. As an additional benefit, gate-defined wires (in HgTe or other settings) should greatly facilitate the fabrication of networks for refined transport experiments used to detect Majoranas, as well as the realization of non-Abelian statistics and quantum information devices.
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