Evidence of a full gap in LaFeAsO$_{1-x}$F$_x$ thin films from infrared spectroscopy
Xiaoxiang Xi, Y. M. Dai, C. C. Homes, M. Kidszun, S. Haindl, G. L. Carr
arXiv:1304.6327 · DOI 10.1103/PhysRevB.87.180509 · 2013-04-23 · Physical Review B
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Abstract
We report conventional and time-resolved infrared spectroscopy on LaFeAsO$_{1-x}$F$_x$ superconducting thin films. The far-infrared transmission can be quantitatively explained by a two-component model including a conventional s-wave superconducting term and a Drude term, suggesting at least one carrier system has a full superconducting gap. Photo-induced studies of excess quasiparticle dynamics reveal a nanosecond effective recombination time and temperature dependence that agree with a recombination bottleneck in the presence of a full gap. The two experiments provide consistent evidence of a full, nodeless though not necessarily isotropic, gap for at least one carrier system in LaFeAsO$_{1-x}$F$_x$.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| LaFeAsO1-xFx Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 30 | Pressure not reported | unknown |
| LaFeAsO1-xFx Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 30 | Pressure not reported | unknown |
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