Tuning the charge-transfer energy in hole-doped cuprates
Chuck-Hou Yee, Gabriel Kotliar
arXiv:1305.0322 · DOI 10.1103/PhysRevB.89.094517 · 2013-05-02 · Physical Review B
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Abstract
Chemical substitution, combined with strain, allows the charge-transfer energy in hole-doped cuprates to be broadly tuned. We theoretically characterize the structural and electronic properties of the family of compounds $R_2$CuO$_2$S$_2$, constructed by sulfur replacement of the apical oxygens and rare earth substitutions in the parent cuprate La$_2$CuO$_4$. Additionally, the enthalpies of formation for possible synthesis pathways are determined.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| La2CuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 38 | Pressure not reported | unknown |
| La2CuO2S2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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