Theoretical Model of Superconducting Spintronic SIsFS Devices

S. V. Bakurskiy; N. V. Klenov; I. I. Soloviev; V. V. Bol'ginov; V. V. Ryazanov; I. V. Vernik; O. A. Mukhanov; M. Yu. Kupriyanov; A. A. Golubov

doi:10.1063/1.4805032

Theoretical Model of Superconducting Spintronic SIsFS Devices

S. V. Bakurskiy, N. V. Klenov, I. I. Soloviev, V. V. Bol'ginov, V. V. Ryazanov, I. V. Vernik, O. A. Mukhanov, M. Yu. Kupriyanov, A. A. Golubov

arXiv:1305.0836 · DOI 10.1063/1.4805032 · 2013-05-03 · Applied Physics Letters

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Abstract

Motivated by recent progress in development of cryogenic memory compatible with single flux quantum (SFQ) circuits we have performed a theoretical study of magnetic SIsFS Josephson junctions, where 'S' is a bulk superconductor, 's' is a thin superconducting film, 'F' is a metallic ferromagnet and 'I' is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have large product of a critical current $I_{C}$ and a normal-state resistance $R_{N}$ in the $π$ state, comparable to that in SIS tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlO${_x}$-Nb-Pd$_{0.99}$Fe$_{0.01}$-Nb junctions.