Voltage Controlled Switching Phenomenon in Disordered Superconductors

Sanjib Ghosh; D. De Munshi

doi:10.1088/0953-8984/26/2/025704

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Voltage Controlled Switching Phenomenon in Disordered Superconductors

Sanjib Ghosh, D. De Munshi

arXiv:1308.5817 · DOI 10.1088/0953-8984/26/2/025704 · 2013-08-27 · Journal of Physics: Condensed Matter

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Abstract

Superconductor-to-Insulator transition (SIT) is a phenomenon occurring for highly disordered superconductors and is suitable for a superconducting switch development. SIT has been demonstrated to be induced by different external parameters such as temperature, magnetic field, electric field, etc. However, electric field induced SIT (ESIT), which has been experimentally demonstrated for some specific materials, holds the promise of any practical device development. Here, we demonstrate, from theoretical considerations, the occurrence of ESIT. We also propose a general switching device architecture using ESIT and study some of its universal behavior, such as the effect of sample size, disorder strength and temperature on the switching action. This work provides a general framework for development of such a device.